t4 - lds - 0103, rev . 3 (130372) ?201 3 microsemi corporation page 1 of 4 msicsn05120cc, ca, and d available silicon carbide d ual s chottky p ower rectifier 5 a, 1200v description these dual 1200 v rated sic schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. they offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon rectifiers. to - 25 7 package a lso available in : du al u3 package (surface mount) msicss 05120cc to - 257 package ( leaded ) msicsn05120 to - 257 tabless package ( leaded ) msicsx05120 u4 package (surface mount) msicss05120 important: for the latest information, visit our website http://www.microsemi.com . features ? to - 257 package. ? lightweight. ? hermetically sealed package. ? internal metallurgical bonds. ? high temperature (t j ) +175 o c. ? zero reverse recovery current. ? temperature independent switching behavior. ? very fast switching compared to fast or ultrafast rectifiers. ? positive v f temperature coefficient (parallel devices for higher currents). ? rohs compliant versions are available. applications / benefits ? schottky barrier diode for military, space and other high reliability applications. ? switching power supplies or other applications requiring extremely fast switchi ng and essentially no switching losses. ? high forward surge capability. ? high reverse voltage capability with very fast switching. ? inherently radiation hard >100 krads as described in microsemi micronote 050 . maximum ratings @ t c = +25 o c unless otherwise note d. msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to + 175 o c thermal resistance, junction - to - case r jc 1.6 c /w working peak reverse voltage v rwm 1200 v non - repetitive peak inverse voltage v rsm 1200 v dc blocking voltage v dc 1200 v average dc outpu t current @ 25 o c i o 5 a non - repetitive sinusoidal surge current @ tp = 8.3 ms, half sinewave, i o = 0; v rm = 0 i fsm 30 a downloaded from: http:///
t4 - lds - 0103, rev . 3 (130372) ?201 3 microsemi corporation page 2 of 4 msicsn05120cc, ca, and d mechanical and packaging ? case: nickel p lated c opper b ase & 1020 s teel f rame . ? terminals: solder d ipped c opper c ored 52 a ll oy or rohs compliant matte/tin plating . ? marking: alpha n umeric . ? polarity: see s chematic on last page. ? weight: approximately 3.43 grams. ? see p ackage d imensions on last page. part nomen clature m sic s n 05 12 0 cc (e3) microsemi silicon carbide schottky to - 257 package avg forward current (a) rohs compliance e3 = rohs compliant blank = non - rohs compliant polarity cc = common cathode ca = common anode d = doubler voltage ( x10 ) symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typic ally 1 mhz) and specified voltage. i f forward current: the forward current dc value, no alternating component. i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. t j junction temperature: the temperature of a semiconductor junction. v f forward voltage: the forward voltage the device will exhibit at a specified current (typi cally shown as maximum value). v r reverse voltage: the reverse voltage dc value, no alternating component. downloaded from: http:///
t4 - lds - 0103, rev . 3 (130372) ?201 3 microsemi corporation page 3 of 4 msicsn05120cc, ca, and d electrical characteristics @ t a = + 25 o c unless otherwise noted parameters / test conditions symbol min. max. typ . unit forward voltage * i f = 1 a, t j = 25 c i f = 2.5 a, t j = 25 c i f = 5.0 a, t j = 25 c v f 1.2 1.6 1.8 v reverse current v r = 1200 v, t j = 25 c v r = 1200 v, t j = 175 c i r 50 100 a junction capacitanc e v r = 0 v f = 1 mhz c j 500 pf * pulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds - 0103, rev . 3 (130372) ?201 3 microsemi corporation page 4 of 4 msicsn05120cc, ca, and d package dimensions note s: 1. dimensions are in inches. 2. millimeter equivalents are given for general information only. 3. g lass meniscus included in dimension tl and bl. schematic cc - common cathode ca C common anode d - doubler term 1 = anode term 1 = cathode term 1 = cathode term 2 = cathode term 2 = anode term 2 = center tap term 3 = anode term 3 = cathode term 3 = anode dimensions ltr inch millimeters min max min max bl 0.410 0.430 10.41 10.92 ch 0.190 0.200 4.83 5.08 ld 0.025 0.035 0.64 0.89 ll 0.505 0.5 95 12.82 15.11 lo 0.120 bsc 3.05 bsc ls 0.100 bsc 2.54 bsc mhd 0.140 0.150 3.56 3.81 mho 0.527 0.537 13.39 13.64 tl 0.645 0.665 16.38 16.89 tt 0.035 0.045 0.89 1.14 tw 0.410 0.420 10.41 10.67 term 1 see schematic term 2 open (no connection) term 3 see schematic downloaded from: http:///
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